WebMay 7, 2024 · A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. WebJan 1, 2012 · Conclusion In this study, a field-plated AlGaN/GaN HEMT device has been fabricated and characterized. Measurement results revealed an output power of 25.36 dBm with a linear gain of 15.39 dB achieved for the FP-HEMT at 2 GHz when biased at V ds = 30 V. An improvement in breakdown voltage from 90 to 160 V was observed.

Field-plate design for edge termination in silicon carbide high …

WebApr 5, 2011 · It has been observed that only a combined impact of optimization of various parameters can lead to the best improvements in field-plated diodes. The optimized overlap between the Schottky-metal … WebIt is clear from Fig. 2 that the field plate does provide field relief at the Schottky contact periphery. The degree of relief increases from approximately 35% for highly doped devices to... mdn ms.current radar weather

Environmental Surface Sampling Using Contact Agar Plates

WebA field-plate semiconductor structure includes a semiconductor substrate, a source ohmic contact, a drain ohmic contact, and a gate contact disposed over a gate region between the source... WebApr 4, 2024 · Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology IEEE Journals & Magazine IEEE Xplore WebMay 12, 2005 · A field effect transistor (FET) with novel field-plate structure relates to a Schottky gate FET structure with field plate thereon for increasing the operation voltage. The structure can eliminate surface damages of unpassivated region and degradation of the interface property of gate contacts during plasma etching of dielectric film for gate … mdn negative infinity